The author has conducted a research on the dualconfiguration fourprobe method of sheet resistance’ measurement, analyzing its advantages on the basis of theories. The measurement result is not affected by the probe spacing, and hence probes with different spacing can be used. It can revise the effect caused by borderline. There is no need seeking for correction factor. With this method, the author has elaborated the RS sample as well as testing principle of near borderline, stating the calculation formula of RS. At the same time, the author has developed the measurement standard device of Silicon sheet resistance based on the dualconfiguration fourprobe method and discoursed on the software and hardware design of this device, providing technological methods for the alignment on the standard samples of Silicon sheet resistance and solving the problem of quantity transmission of Silicon sheet resistance parameter.